Crystal Stability, Chemical Bonding, Optical and Thermoelectric Properties of LaAgZnX₂ (X = P, As) Through First Principles Study

Zintl materials have received enormous attention in recent time due to their unique structure and thermoelectric efficiency. In this work, quaternary Zintl compounds LaAgZnX₂ (X = P, As) have been comprehensively investigated using the FP-LAPW + lo method through first principles approximation. The dynamic stability of the samples is performed through phonon analysis. Birch–Murnaghan equation of states is used to determine ground state parameters. The lattice constant increases while formation energy and bulk modulus B(GPa) decrease by anion replacement from P to As. Band structure calculation shows that LaAgZnP₂ is an indirect bandgap semiconductor while LaAgZnAs₂ is a direct bandgap semiconductor. The density of states (DOS) demonstrates that the valence band (V.B) is mainly comprised of Zn-d and X-p states while the La-f state is in the conduction band (C.B) along with the minor contribution of the La-d state. Substantial absorption is observed in the low-frequency ultraviolet and visible spectrums for these compounds. Red shifting of the hallmark optic peak occurs due to the anion replacement from P to As. To investigate the electric and thermal conductivities, Seebeck coefficients, and thermopower factor, the Boltzmann transport theory is used to quantify them for these materials. High absorption peaks and figures of merits of these compounds highlight their potential usage in optoelectronics and thermoelectric systems.