Conversion of Y                         3                         (Al,Ga)                         5                         O                         12                         :Tb                          3+                          to Y                         2                         Si                         2                         O                         7                         :Tb                         3+                          thin film by annealing at higher temperatures

A. Yousif; H. C. Swart; O. M. Ntwaeaborwa; E. Coetsee

doi:10.1016/j.apsusc.2013.01.025

Conversion of Y ₃ (Al,Ga) ₅ O ₁₂ :Tb ³⁺ to Y ₂ Si ₂ O ₇ :Tb ³⁺ thin film by annealing at higher temperatures

A. Yousif, H. C. Swart, O. M. Ntwaeaborwa, E. Coetsee

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Y ₃ (Al,Ga) ₅ O ₁₂ :Tb thin films were grown on Si(1 0 0) substrates in an Ar working atmosphere by using the pulsed laser deposition (PLD) technique. The Y ₃ (Al,Ga) ₅ O ₁₂ :Tb target was ablation deposited onto a Si(1 0 0) substrate using a 266 nm Nd:YAG laser. The influence of post deposition annealing temperature (1073 K to 1473 K) on the excitation and the emission bands, and the crystal structure of the thin film were monitored. X-ray diffraction (XRD) and photoelectron spectroscopy (XPS) depth profiles of the thin films indicate that there were annealing induced changes in the crystal structure and chemical composition causing changes in the excitation bands. These changes (structure and composition) are attributed to interdiffusion of atomic species between the substrate and the Y ₃ (Al,Ga) ₅ O ₁₂ :Tb ³⁺ thin film. The XRD and XPS data confirm that after annealing, Y ₃ (Al,Ga) ₅ O ₁₂ :Tb ³⁺ was converted to Y ₂ Si ₂ O ₇ :Tb ³⁺ . A change in the relative ratios of the excitation band intensities was measured. Atomic force microscopy (AFM) showed that topographical changes also occurred during the annealing process. Thermoluminescence (TL) glow curves of the Y ₃ (Al,Ga) ₅ O ₁₂ :Tb ³⁺ thin films before and after annealing, indicated the presence of different types of traps resulting from the change on the structure of the thin films.

Original language	English
Pages (from-to)	331-339
Number of pages	9
Journal	Applied Surface Science
Volume	270
DOIs	https://doi.org/10.1016/j.apsusc.2013.01.025
Publication status	Published - 1 Apr 2013
Externally published	Yes

Keywords

Defect trap levels
PLD
Photoluminescence (PL)
Thin films
XPS

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2013.01.025

Cite this

Yousif, A., Swart, H. C., Ntwaeaborwa, O. M., & Coetsee, E. (2013). Conversion of Y ₃ (Al,Ga) ₅ O ₁₂ :Tb ³⁺ to Y ₂ Si ₂ O ₇ :Tb ³⁺ thin film by annealing at higher temperatures Applied Surface Science, 270, 331-339. https://doi.org/10.1016/j.apsusc.2013.01.025

Yousif, A. ; Swart, H. C. ; Ntwaeaborwa, O. M. et al. / Conversion of Y ₃ (Al,Ga) ₅ O ₁₂ :Tb ³⁺ to Y ₂ Si ₂ O ₇ :Tb ³⁺ thin film by annealing at higher temperatures In: Applied Surface Science. 2013 ; Vol. 270. pp. 331-339.

@article{e9a380650ed34e608b9b67431fb6891b,

title = " Conversion of Y 3 (Al,Ga) 5 O 12 :Tb 3+ to Y 2 Si 2 O 7 :Tb 3+ thin film by annealing at higher temperatures ",

abstract = " Y 3 (Al,Ga) 5 O 12 :Tb thin films were grown on Si(1 0 0) substrates in an Ar working atmosphere by using the pulsed laser deposition (PLD) technique. The Y 3 (Al,Ga) 5 O 12 :Tb target was ablation deposited onto a Si(1 0 0) substrate using a 266 nm Nd:YAG laser. The influence of post deposition annealing temperature (1073 K to 1473 K) on the excitation and the emission bands, and the crystal structure of the thin film were monitored. X-ray diffraction (XRD) and photoelectron spectroscopy (XPS) depth profiles of the thin films indicate that there were annealing induced changes in the crystal structure and chemical composition causing changes in the excitation bands. These changes (structure and composition) are attributed to interdiffusion of atomic species between the substrate and the Y 3 (Al,Ga) 5 O 12 :Tb 3+ thin film. The XRD and XPS data confirm that after annealing, Y 3 (Al,Ga) 5 O 12 :Tb 3+ was converted to Y 2 Si 2 O 7 :Tb 3+ . A change in the relative ratios of the excitation band intensities was measured. Atomic force microscopy (AFM) showed that topographical changes also occurred during the annealing process. Thermoluminescence (TL) glow curves of the Y 3 (Al,Ga) 5 O 12 :Tb 3+ thin films before and after annealing, indicated the presence of different types of traps resulting from the change on the structure of the thin films.",

keywords = "Defect trap levels, PLD, Photoluminescence (PL), Thin films, XPS",

author = "A. Yousif and Swart, {H. C.} and Ntwaeaborwa, {O. M.} and E. Coetsee",

year = "2013",

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language = "English",

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Yousif, A, Swart, HC, Ntwaeaborwa, OM & Coetsee, E 2013, ' Conversion of Y ₃ (Al,Ga) ₅ O ₁₂ :Tb ³⁺ to Y ₂ Si ₂ O ₇ :Tb ³⁺ thin film by annealing at higher temperatures ', Applied Surface Science, vol. 270, pp. 331-339. https://doi.org/10.1016/j.apsusc.2013.01.025

Conversion of Y ₃ (Al,Ga) ₅ O ₁₂ :Tb ³⁺ to Y ₂ Si ₂ O ₇ :Tb ³⁺ thin film by annealing at higher temperatures . / Yousif, A.; Swart, H. C.; Ntwaeaborwa, O. M. et al.
In: Applied Surface Science, Vol. 270, 01.04.2013, p. 331-339.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Conversion of Y 3 (Al,Ga) 5 O 12 :Tb 3+ to Y 2 Si 2 O 7 :Tb 3+ thin film by annealing at higher temperatures

AU - Yousif, A.

AU - Swart, H. C.

AU - Ntwaeaborwa, O. M.

AU - Coetsee, E.

PY - 2013/4/1

Y1 - 2013/4/1

N2 - Y 3 (Al,Ga) 5 O 12 :Tb thin films were grown on Si(1 0 0) substrates in an Ar working atmosphere by using the pulsed laser deposition (PLD) technique. The Y 3 (Al,Ga) 5 O 12 :Tb target was ablation deposited onto a Si(1 0 0) substrate using a 266 nm Nd:YAG laser. The influence of post deposition annealing temperature (1073 K to 1473 K) on the excitation and the emission bands, and the crystal structure of the thin film were monitored. X-ray diffraction (XRD) and photoelectron spectroscopy (XPS) depth profiles of the thin films indicate that there were annealing induced changes in the crystal structure and chemical composition causing changes in the excitation bands. These changes (structure and composition) are attributed to interdiffusion of atomic species between the substrate and the Y 3 (Al,Ga) 5 O 12 :Tb 3+ thin film. The XRD and XPS data confirm that after annealing, Y 3 (Al,Ga) 5 O 12 :Tb 3+ was converted to Y 2 Si 2 O 7 :Tb 3+ . A change in the relative ratios of the excitation band intensities was measured. Atomic force microscopy (AFM) showed that topographical changes also occurred during the annealing process. Thermoluminescence (TL) glow curves of the Y 3 (Al,Ga) 5 O 12 :Tb 3+ thin films before and after annealing, indicated the presence of different types of traps resulting from the change on the structure of the thin films.

AB - Y 3 (Al,Ga) 5 O 12 :Tb thin films were grown on Si(1 0 0) substrates in an Ar working atmosphere by using the pulsed laser deposition (PLD) technique. The Y 3 (Al,Ga) 5 O 12 :Tb target was ablation deposited onto a Si(1 0 0) substrate using a 266 nm Nd:YAG laser. The influence of post deposition annealing temperature (1073 K to 1473 K) on the excitation and the emission bands, and the crystal structure of the thin film were monitored. X-ray diffraction (XRD) and photoelectron spectroscopy (XPS) depth profiles of the thin films indicate that there were annealing induced changes in the crystal structure and chemical composition causing changes in the excitation bands. These changes (structure and composition) are attributed to interdiffusion of atomic species between the substrate and the Y 3 (Al,Ga) 5 O 12 :Tb 3+ thin film. The XRD and XPS data confirm that after annealing, Y 3 (Al,Ga) 5 O 12 :Tb 3+ was converted to Y 2 Si 2 O 7 :Tb 3+ . A change in the relative ratios of the excitation band intensities was measured. Atomic force microscopy (AFM) showed that topographical changes also occurred during the annealing process. Thermoluminescence (TL) glow curves of the Y 3 (Al,Ga) 5 O 12 :Tb 3+ thin films before and after annealing, indicated the presence of different types of traps resulting from the change on the structure of the thin films.

KW - Defect trap levels

KW - PLD

KW - Photoluminescence (PL)

KW - Thin films

KW - XPS

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Yousif A, Swart HC, Ntwaeaborwa OM, Coetsee E. Conversion of Y ₃ (Al,Ga) ₅ O ₁₂ :Tb ³⁺ to Y ₂ Si ₂ O ₇ :Tb ³⁺ thin film by annealing at higher temperatures Applied Surface Science. 2013 Apr 1;270:331-339. doi: 10.1016/j.apsusc.2013.01.025