Conclusions and Future Scope

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Electric Power Utilization 33%
• Output Voltage 33%
• Current Output 33%
• Integrated Circuit 33%
• Insertion Loss 33%
• Circuit Design 33%
• Oxide Thickness 33%
• State Condition 33%
• Logic Gate 33%
• Circuit Element 33%
• Radio Frequency 33%
• Propagation Delay 33%
• High Packing Density 33%
• Resistance-Voltage 33%
• Polysilicon 33%
• Digital Signal 33%

Keyphrases

• On-current 33%
• Leakage Area 33%
• Low Power Circuits 33%
• Voltage Threshold 33%
• Switching Circuits 33%
• On-state Resistance 33%
• Switching Condition 33%
• Low Insertion Loss 33%
• Analog Switch 33%
• Microwave Switches 33%
• Digital Signal 33%
• Polysilicon 33%
• Logic Density 33%
• Low Control Voltage 33%
• Multiple Buffer 33%
• Double Gate Transistor 33%
• Signal Density 33%

Material Science

• Electronic Circuit 100%
• Transistor 75%
• Metal-Oxide-Semiconductor Field-Effect Transistor 75%
• Density 50%
• Capacitance 50%
• Capacitor 25%
• Oxide Compound 25%