Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing

O. E. Tereshchenko; D. Paget; A. C.H. Rowe; V. L. Berkovits; P. Chiaradia; B. P. Doyle; S. Nannarone

doi:10.1016/j.susc.2008.12.014

Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing

O. E. Tereshchenko, D. Paget, A. C.H. Rowe, V. L. Berkovits, P. Chiaradia, B. P. Doyle, S. Nannarone

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Well-ordered clean InAs(1 1 1) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InCl_x. Annealing induces desorption of the overlayer and reveals (2 × 2) and (1 × 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (≈250 °C) thereby avoiding anion evaporation.

Original language	English
Pages (from-to)	518-522
Number of pages	5
Journal	Surface Science
Volume	603
Issue number	3
DOIs	https://doi.org/10.1016/j.susc.2008.12.014
Publication status	Published - 1 Feb 2009
Externally published	Yes

Keywords

HCl-isopropanol treatment
InAs
Low energy electron diffraction
Passivation
Soft X-ray photoemission

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.susc.2008.12.014

Cite this

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title = "Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing",

abstract = "Well-ordered clean InAs(1 1 1) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InClx. Annealing induces desorption of the overlayer and reveals (2 × 2) and (1 × 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (≈250 °C) thereby avoiding anion evaporation.",

keywords = "HCl-isopropanol treatment, InAs, Low energy electron diffraction, Passivation, Soft X-ray photoemission",

author = "Tereshchenko, {O. E.} and D. Paget and Rowe, {A. C.H.} and Berkovits, {V. L.} and P. Chiaradia and Doyle, {B. P.} and S. Nannarone",

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doi = "10.1016/j.susc.2008.12.014",

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T1 - Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing

AU - Tereshchenko, O. E.

AU - Paget, D.

AU - Rowe, A. C.H.

AU - Berkovits, V. L.

AU - Chiaradia, P.

AU - Doyle, B. P.

AU - Nannarone, S.

PY - 2009/2/1

Y1 - 2009/2/1

N2 - Well-ordered clean InAs(1 1 1) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InClx. Annealing induces desorption of the overlayer and reveals (2 × 2) and (1 × 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (≈250 °C) thereby avoiding anion evaporation.

AB - Well-ordered clean InAs(1 1 1) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InClx. Annealing induces desorption of the overlayer and reveals (2 × 2) and (1 × 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (≈250 °C) thereby avoiding anion evaporation.

KW - HCl-isopropanol treatment

KW - InAs

KW - Low energy electron diffraction

KW - Passivation

KW - Soft X-ray photoemission

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DO - 10.1016/j.susc.2008.12.014

M3 - Article

AN - SCOPUS:58749098033

SN - 0039-6028

VL - 603

SP - 518

EP - 522

JO - Surface Science

JF - Surface Science

IS - 3

ER -

Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing

Abstract

Keywords

ASJC Scopus subject areas

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