@inproceedings{f2ea4383f97b404dbaebad06d33d879a,
title = "Circuit design with independent double gate transistors",
abstract = "Circuits with transistors using independently controlled gates have been designed to reduce the number of transistors and to increase the logic density per area. This paper proposed a full adder and substractor circuit with novel Vertical Slit Field Effect Transistor and unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. With the help of double gate transistor, some of the used parameters value has been varied significantly thus improving its performance quality. Double gate transistor circuit is the first choice for low power application domain as well as used in Radio Frequency (RF) devices.",
keywords = "AND gate, Double gate MOSFET, Full substractor, RF circuit, VLSI, VeSFET",
author = "Srivastava, {Viranjay M.} and Nitant Saubagya and G. Singh",
year = "2010",
doi = "10.1109/ACE.2010.65",
language = "English",
isbn = "9780769540580",
series = "ACE 2010 - 2010 International Conference on Advances in Computer Engineering",
pages = "289--291",
booktitle = "ACE 2010 - 2010 International Conference on Advances in Computer Engineering",
note = "2010 International Conference on Advances in Computer Engineering, ACE 2010 ; Conference date: 21-06-2010 Through 22-06-2010",
}