Circuit design with independent double gate transistors

Viranjay M. Srivastava, Nitant Saubagya, G. Singh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Circuits with transistors using independently controlled gates have been designed to reduce the number of transistors and to increase the logic density per area. This paper proposed a full adder and substractor circuit with novel Vertical Slit Field Effect Transistor and unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. With the help of double gate transistor, some of the used parameters value has been varied significantly thus improving its performance quality. Double gate transistor circuit is the first choice for low power application domain as well as used in Radio Frequency (RF) devices.

Original languageEnglish
Title of host publicationACE 2010 - 2010 International Conference on Advances in Computer Engineering
Pages289-291
Number of pages3
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 International Conference on Advances in Computer Engineering, ACE 2010 - Bangalore, India
Duration: 21 Jun 201022 Jun 2010

Publication series

NameACE 2010 - 2010 International Conference on Advances in Computer Engineering

Conference

Conference2010 International Conference on Advances in Computer Engineering, ACE 2010
Country/TerritoryIndia
CityBangalore
Period21/06/1022/06/10

Keywords

  • AND gate
  • Double gate MOSFET
  • Full substractor
  • RF circuit
  • VLSI
  • VeSFET

ASJC Scopus subject areas

  • Computer Science (miscellaneous)

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