Charge sensitivity of the inductive single-electron transistor

Mika A. Sillanpää; Leif Roschier; Pertti J. Hakonen

doi:10.1063/1.2034096

Charge sensitivity of the inductive single-electron transistor

Mika A. Sillanpää, Leif Roschier, Pertti J. Hakonen

Aalto University

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than 10-6 eHz is possible with a high Q value ∼ 103, or using a superconducting quantum interference device amplifier. The model is compared to experiment, where charge sensitivity 3× 10-5 eHz and bandwidth 100 MHz are achieved.

Original language	English
Article number	092502
Journal	Applied Physics Letters
Volume	87
Issue number	9
DOIs	https://doi.org/10.1063/1.2034096
Publication status	Published - 29 Aug 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2034096

Cite this

@article{dec4953b3d2744a3b45f1aaeaf9352c6,

title = "Charge sensitivity of the inductive single-electron transistor",

abstract = "We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than 10-6 eHz is possible with a high Q value ∼ 103, or using a superconducting quantum interference device amplifier. The model is compared to experiment, where charge sensitivity 3× 10-5 eHz and bandwidth 100 MHz are achieved.",

author = "Sillanp{\"a}{\"a}, {Mika A.} and Leif Roschier and Hakonen, {Pertti J.}",

year = "2005",

month = aug,

day = "29",

doi = "10.1063/1.2034096",

language = "English",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Charge sensitivity of the inductive single-electron transistor

AU - Sillanpää, Mika A.

AU - Roschier, Leif

AU - Hakonen, Pertti J.

PY - 2005/8/29

Y1 - 2005/8/29

N2 - We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than 10-6 eHz is possible with a high Q value ∼ 103, or using a superconducting quantum interference device amplifier. The model is compared to experiment, where charge sensitivity 3× 10-5 eHz and bandwidth 100 MHz are achieved.

AB - We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than 10-6 eHz is possible with a high Q value ∼ 103, or using a superconducting quantum interference device amplifier. The model is compared to experiment, where charge sensitivity 3× 10-5 eHz and bandwidth 100 MHz are achieved.

UR - http://www.scopus.com/inward/record.url?scp=24644519579&partnerID=8YFLogxK

U2 - 10.1063/1.2034096

DO - 10.1063/1.2034096

M3 - Article

AN - SCOPUS:24644519579

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092502

ER -

Charge sensitivity of the inductive single-electron transistor

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this