Characterization of Al+-implanted LiF by a monoenergetic positron beam

E. J. Sendezera, A. T. Davidson, C. G. Fischer, S. H. Connel, J. P.F. Sellschop, W. Anwand, G. Brauer, E. M. Nicht

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

We have studied the radiation damage created by the implantation of 100 keV Al+ ions into LiF crystals using a monoenergetic positron beam whose energy can be varied. The fluence range investigated was 1013 to 1016 ions cm-2. Pronounced effects of radiation damage are seen in the line shape of the positron spectrum. The measured S-parameter is used to characterize the radiation damage as a function of depth. A four-layer model is used to fit the data using the computer program VEPFIT. The Positron Annihilation Spectroscopy (PAS) results are correlated with optical absorption measurements on the crystals. The use of positrons to profile the radiation damage as a function of depth below the ion implantation surface is shown to be feasible for lithium fluoride crystals.

Original languageEnglish
Pages (from-to)125-129
Number of pages5
JournalApplied Surface Science
Volume149
Issue number1
DOIs
Publication statusPublished - 1 Aug 1999
Externally publishedYes
EventProceeding of the 1998 8th International Workshop on Slow-Positron Beam Techniques fot Solids and Surfaces - Cape Town, S Afr
Duration: 6 Sept 199812 Sept 1998

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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