Abstract
We have studied the radiation damage created by the implantation of 100 keV Al+ ions into LiF crystals using a monoenergetic positron beam whose energy can be varied. The fluence range investigated was 1013 to 1016 ions cm-2. Pronounced effects of radiation damage are seen in the line shape of the positron spectrum. The measured S-parameter is used to characterize the radiation damage as a function of depth. A four-layer model is used to fit the data using the computer program VEPFIT. The Positron Annihilation Spectroscopy (PAS) results are correlated with optical absorption measurements on the crystals. The use of positrons to profile the radiation damage as a function of depth below the ion implantation surface is shown to be feasible for lithium fluoride crystals.
Original language | English |
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Pages (from-to) | 125-129 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 149 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Aug 1999 |
Externally published | Yes |
Event | Proceeding of the 1998 8th International Workshop on Slow-Positron Beam Techniques fot Solids and Surfaces - Cape Town, S Afr Duration: 6 Sept 1998 → 12 Sept 1998 |
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- General Physics and Astronomy
- Surfaces and Interfaces
- Surfaces, Coatings and Films