Change of magnetic ground state by light electron doping in CeOs 2Al10

D. D. Khalyavin, D. T. Adroja, P. Manuel, J. Kawabata, K. Umeo, T. Takabatake, A. M. Strydom

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35 Citations (Scopus)


The effect of Ir substitution for Os in CeOs2Al10, with an unusually high Néel temperature of T*∼28.5 K, has been studied by high-resolution neutron diffraction and magnetization measurements. A small amount of Ir (∼8%) results in a pronounced change of the magnetic structure of the Ce sublattice. The induced magnetic ground state is controlled by single ion anisotropy and implies an antiferromagnetic arrangement of the Ce moments along the a axis, as expected from the anisotropy of the paramagnetic susceptibility. The value of the ordered moments, 0.92(1)μB, is substantially bigger than in the undoped compound, whereas the transition temperature is reduced down to 21 K. A comparison of the observed phenomena with the recently studied CeRu1.9Rh 0.1Al10 system, exhibiting similar behavior, strongly suggests the electron doping as the main origin of the ground state changes. This provides additional ways for exploring the anomalous magnetic properties of the Ce(Ru/Os)2Al10 compounds.

Original languageEnglish
Article number060403
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number6
Publication statusPublished - 13 Aug 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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