Carbon nitride supported ultrafine manganese sulfide based nonvolatile resistive switching device for nibble-sized memory application

Kaushik Mallick; Venkata K. Perla; Sarit K. Ghosh

doi:10.1021/acsaelm.0c00817

Carbon nitride supported ultrafine manganese sulfide based nonvolatile resistive switching device for nibble-sized memory application

Kaushik Mallick, Venkata K. Perla, Sarit K. Ghosh

Chemical Sciences

University of Johannesburg

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A high-temperature in situ route has been employed for the synthesis of carbon nitride supported manganese sulfide nanoparticles (CNMS). The hybrid material was characterized using different analytical techniques. The electrical property of the CNMS-based device demonstrated the resistive switching behavior with asymmetric S-type bipolar characteristics. The device exhibited the SET and RESET processes at +2.7 and −3.5 V, respectively, with the on−off ratio of ∼10³. The endurance and data retention studies were conducted for 10³ cycles and 10³ s, respectively, and the device revealed excellent stability with a constant on−off ratio. In this study, we also have demonstrated a nibble-sized device, made with CNMS, successfully processed, stored, and recovered the information in a binary form.

Original language	English
Pages (from-to)	3987-3993
Number of pages	7
Journal	ACS Applied Electronic Materials
Volume	2
Issue number	12
DOIs	https://doi.org/10.1021/acsaelm.0c00817
Publication status	Published - 22 Dec 2020

Keywords

Asymmetric S type
Manganese sulfide nanoparticles
Nibble-sized device
Ohmic
Resistive switching
Schottky emission mechanism

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrochemistry
Materials Chemistry

Access to Document

10.1021/acsaelm.0c00817

Cite this

@article{80f22813429e45b885075e7b2571402e,

title = "Carbon nitride supported ultrafine manganese sulfide based nonvolatile resistive switching device for nibble-sized memory application",

abstract = "A high-temperature in situ route has been employed for the synthesis of carbon nitride supported manganese sulfide nanoparticles (CNMS). The hybrid material was characterized using different analytical techniques. The electrical property of the CNMS-based device demonstrated the resistive switching behavior with asymmetric S-type bipolar characteristics. The device exhibited the SET and RESET processes at +2.7 and −3.5 V, respectively, with the on−off ratio of ∼103. The endurance and data retention studies were conducted for 103 cycles and 103 s, respectively, and the device revealed excellent stability with a constant on−off ratio. In this study, we also have demonstrated a nibble-sized device, made with CNMS, successfully processed, stored, and recovered the information in a binary form.",

keywords = "Asymmetric S type, Manganese sulfide nanoparticles, Nibble-sized device, Ohmic, Resistive switching, Schottky emission mechanism",

author = "Kaushik Mallick and Perla, {Venkata K.} and Ghosh, {Sarit K.}",

note = "Publisher Copyright: {\textcopyright} 2020 American Chemical Society",

year = "2020",

month = dec,

day = "22",

doi = "10.1021/acsaelm.0c00817",

language = "English",

volume = "2",

pages = "3987--3993",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Carbon nitride supported ultrafine manganese sulfide based nonvolatile resistive switching device for nibble-sized memory application

AU - Mallick, Kaushik

AU - Perla, Venkata K.

AU - Ghosh, Sarit K.

PY - 2020/12/22

Y1 - 2020/12/22

N2 - A high-temperature in situ route has been employed for the synthesis of carbon nitride supported manganese sulfide nanoparticles (CNMS). The hybrid material was characterized using different analytical techniques. The electrical property of the CNMS-based device demonstrated the resistive switching behavior with asymmetric S-type bipolar characteristics. The device exhibited the SET and RESET processes at +2.7 and −3.5 V, respectively, with the on−off ratio of ∼103. The endurance and data retention studies were conducted for 103 cycles and 103 s, respectively, and the device revealed excellent stability with a constant on−off ratio. In this study, we also have demonstrated a nibble-sized device, made with CNMS, successfully processed, stored, and recovered the information in a binary form.

AB - A high-temperature in situ route has been employed for the synthesis of carbon nitride supported manganese sulfide nanoparticles (CNMS). The hybrid material was characterized using different analytical techniques. The electrical property of the CNMS-based device demonstrated the resistive switching behavior with asymmetric S-type bipolar characteristics. The device exhibited the SET and RESET processes at +2.7 and −3.5 V, respectively, with the on−off ratio of ∼103. The endurance and data retention studies were conducted for 103 cycles and 103 s, respectively, and the device revealed excellent stability with a constant on−off ratio. In this study, we also have demonstrated a nibble-sized device, made with CNMS, successfully processed, stored, and recovered the information in a binary form.

KW - Asymmetric S type

KW - Manganese sulfide nanoparticles

KW - Nibble-sized device

KW - Ohmic

KW - Resistive switching

KW - Schottky emission mechanism

UR - http://www.scopus.com/inward/record.url?scp=85097958718&partnerID=8YFLogxK

U2 - 10.1021/acsaelm.0c00817

DO - 10.1021/acsaelm.0c00817

M3 - Article

AN - SCOPUS:85097958718

SN - 2637-6113

VL - 2

SP - 3987

EP - 3993

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 12

ER -

Carbon nitride supported ultrafine manganese sulfide based nonvolatile resistive switching device for nibble-sized memory application

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this