Carbon nanotube radio-frequency single-electron transistor

Leif Roschier; Mika Sillanpää; Wang Taihong; Markus Ahlskog; Sumio Iijima; Pertti Hakonen

doi:10.1023/B:JOLT.0000041278.59298.73

Carbon nanotube radio-frequency single-electron transistor

Leif Roschier
, Mika Sillanpää
, Wang Taihong
, Markus Ahlskog
, Sumio Iijima
, Pertti Hakonen

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/√Hz.

Original language	English
Pages (from-to)	465-480
Number of pages	16
Journal	Journal of Low Temperature Physics
Volume	136
Issue number	5-6
DOIs	https://doi.org/10.1023/B:JOLT.0000041278.59298.73
Publication status	Published - Sept 2004
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
General Materials Science
Condensed Matter Physics

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10.1023/B:JOLT.0000041278.59298.73

Cite this

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title = "Carbon nanotube radio-frequency single-electron transistor",

abstract = "We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/√Hz.",

author = "Leif Roschier and Mika Sillanp{\"a}{\"a} and Wang Taihong and Markus Ahlskog and Sumio Iijima and Pertti Hakonen",

year = "2004",

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language = "English",

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T1 - Carbon nanotube radio-frequency single-electron transistor

AU - Roschier, Leif

AU - Sillanpää, Mika

AU - Taihong, Wang

AU - Ahlskog, Markus

AU - Iijima, Sumio

AU - Hakonen, Pertti

PY - 2004/9

Y1 - 2004/9

N2 - We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/√Hz.

AB - We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/√Hz.

UR - https://www.scopus.com/pages/publications/4544359808

U2 - 10.1023/B:JOLT.0000041278.59298.73

DO - 10.1023/B:JOLT.0000041278.59298.73

M3 - Article

AN - SCOPUS:4544359808

SN - 0022-2291

VL - 136

SP - 465

EP - 480

JO - Journal of Low Temperature Physics

JF - Journal of Low Temperature Physics

IS - 5-6

ER -

Carbon nanotube radio-frequency single-electron transistor

Abstract

ASJC Scopus subject areas

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