Bulk-sensitive high-resolution Ce 3d-4f resonance photoemission study of CeNiSn and CePdSn

A. Sekiyama; S. Suga; T. Iwasaki; S. Ueda; S. Imada; Y. Saitoh; T. Yoshino; D. T. Adroja; T. Fs Takabatake

doi:10.1016/S0368-2048(00)00326-1

Bulk-sensitive high-resolution Ce 3d-4f resonance photoemission study of CeNiSn and CePdSn

A. Sekiyama
, S. Suga
, T. Iwasaki
, S. Ueda
, S. Imada
, Y. Saitoh
, T. Yoshino
, D. T. Adroja
, T. Fs Takabatake

Research output: Contribution to journal › Conference article › peer-review

19 Citations (Scopus)

Abstract

High-resolution Ce 3d-4f resonance photoemission (RPES) spectra highly reflecting bulk 4f states have been measured for a Kondo semiconductor CeNiSn and its reference material CePdSn. An intensity of f⁰ final states is markedly weaker for CeNiSn than for CePdSn. We also report on photon-energy dependence of the RPES spectra. Comparison between the RPES spectra of CeNiSn and La 3d-4f RPES spectra of LaNiSn shows that the rare-earth 5d enhancement is significantly weaker than Ce 4f resonance enhancement. The high-resolution 3d-4f RPES spectra clarify the difference of the bulk electronic states near the Fermi level between CeNiSn and CePdSn.

Original language	English
Pages (from-to)	699-703
Number of pages	5
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	114-116
DOIs	https://doi.org/10.1016/S0368-2048(00)00326-1
Publication status	Published - Mar 2001
Externally published	Yes
Event	8th International Conference on Electronic Spectroscopy and Structure (ICESS-8) - Berkeley, CA, USA Duration: 8 Aug 2000 → 12 Aug 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

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10.1016/S0368-2048(00)00326-1

Cite this

@article{740d5bcd041145179a0a5adec89c1f4b,

title = "Bulk-sensitive high-resolution Ce 3d-4f resonance photoemission study of CeNiSn and CePdSn",

abstract = "High-resolution Ce 3d-4f resonance photoemission (RPES) spectra highly reflecting bulk 4f states have been measured for a Kondo semiconductor CeNiSn and its reference material CePdSn. An intensity of f0 final states is markedly weaker for CeNiSn than for CePdSn. We also report on photon-energy dependence of the RPES spectra. Comparison between the RPES spectra of CeNiSn and La 3d-4f RPES spectra of LaNiSn shows that the rare-earth 5d enhancement is significantly weaker than Ce 4f resonance enhancement. The high-resolution 3d-4f RPES spectra clarify the difference of the bulk electronic states near the Fermi level between CeNiSn and CePdSn.",

author = "A. Sekiyama and S. Suga and T. Iwasaki and S. Ueda and S. Imada and Y. Saitoh and T. Yoshino and Adroja, \{D. T.\} and Takabatake, \{T. Fs\}",

year = "2001",

month = mar,

doi = "10.1016/S0368-2048(00)00326-1",

language = "English",

volume = "114-116",

pages = "699--703",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier B.V.",

note = "8th International Conference on Electronic Spectroscopy and Structure (ICESS-8) ; Conference date: 08-08-2000 Through 12-08-2000",

}

TY - JOUR

T1 - Bulk-sensitive high-resolution Ce 3d-4f resonance photoemission study of CeNiSn and CePdSn

AU - Sekiyama, A.

AU - Suga, S.

AU - Iwasaki, T.

AU - Ueda, S.

AU - Imada, S.

AU - Saitoh, Y.

AU - Yoshino, T.

AU - Adroja, D. T.

AU - Takabatake, T. Fs

PY - 2001/3

Y1 - 2001/3

N2 - High-resolution Ce 3d-4f resonance photoemission (RPES) spectra highly reflecting bulk 4f states have been measured for a Kondo semiconductor CeNiSn and its reference material CePdSn. An intensity of f0 final states is markedly weaker for CeNiSn than for CePdSn. We also report on photon-energy dependence of the RPES spectra. Comparison between the RPES spectra of CeNiSn and La 3d-4f RPES spectra of LaNiSn shows that the rare-earth 5d enhancement is significantly weaker than Ce 4f resonance enhancement. The high-resolution 3d-4f RPES spectra clarify the difference of the bulk electronic states near the Fermi level between CeNiSn and CePdSn.

AB - High-resolution Ce 3d-4f resonance photoemission (RPES) spectra highly reflecting bulk 4f states have been measured for a Kondo semiconductor CeNiSn and its reference material CePdSn. An intensity of f0 final states is markedly weaker for CeNiSn than for CePdSn. We also report on photon-energy dependence of the RPES spectra. Comparison between the RPES spectra of CeNiSn and La 3d-4f RPES spectra of LaNiSn shows that the rare-earth 5d enhancement is significantly weaker than Ce 4f resonance enhancement. The high-resolution 3d-4f RPES spectra clarify the difference of the bulk electronic states near the Fermi level between CeNiSn and CePdSn.

UR - https://www.scopus.com/pages/publications/0035276120

U2 - 10.1016/S0368-2048(00)00326-1

DO - 10.1016/S0368-2048(00)00326-1

M3 - Conference article

AN - SCOPUS:0035276120

SN - 0368-2048

VL - 114-116

SP - 699

EP - 703

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

T2 - 8th International Conference on Electronic Spectroscopy and Structure (ICESS-8)

Y2 - 8 August 2000 through 12 August 2000

ER -

Bulk-sensitive high-resolution Ce 3d-4f resonance photoemission study of CeNiSn and CePdSn

Abstract

ASJC Scopus subject areas

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