Abstract
A layer of ∼30 nm V2O5/100 nm-SiO2 on Si was employed in the in situ Raman spectroscopy in the presence of NH3 effluent from a thermal decomposition of ammonium acetate salt with the salt heated at 100 °C. When the layer is placed at 25 °C, we observe a reversible red-shift of 194 cm-1 V2O5 phonon by 2 cm-1 upon NH3 gas injection to saturation, as well as a reversible blue-shift of the 996 cm-1 by 4 cm-1 upon NH3 injection. However when the sensing layer is placed at 100 °C, the 194 cm-1 remains un-shifted while the 996 cm-1 phonon is red-shifted. There is a decrease/increase in intensity of the 145 cm-1 phonon at 25 °C/100 °C when NH3 interacts with V2O5 surface. Using the traditional and quantitative gas sensor tester system, we find that the V2O5 sensor at 25 °C responds faster than at 100 °C up to 20 ppm of NH3 beyond which it responds faster at 100 °C than at 25 °C. Overall rankings of the NH3 gas sensing features between the two techniques showed that the in situ Raman spectroscopy is faster in response compared with the traditional chemi-resistive tester. Hooke's law, phonon confinement in ∼51 nm globular particles with ∼20 nm pore size and physisorption/chemisorption principles have been employed in the explanation of the data presented.
Original language | English |
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Article number | 015106 |
Journal | Journal Physics D: Applied Physics |
Volume | 51 |
Issue number | 1 |
DOIs | |
Publication status | Published - 10 Jan 2018 |
Externally published | Yes |
Keywords
- blue-shift
- in situ Raman sensing
- phonons
- red-shift
- selectivity
- VO
- VO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films