Bipolar resistive switching behavior of carbon nitride supported copper oxide nanoparticles

Venkata K. Perla; Sarit K. Ghosh; Kaushik Mallick

doi:10.1016/j.cplett.2020.137650

Bipolar resistive switching behavior of carbon nitride supported copper oxide nanoparticles

Venkata K. Perla, Sarit K. Ghosh, Kaushik Mallick

Chemical Sciences

University of Johannesburg

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In this article, a new in-situ protocol has been reported for the synthesis of carbon nitride supported copper oxide nanoparticles (CN-Cu₂O), where the oxide nanoparticles are highly dispersed on the support matrix. The composite system was studied for the electronic memory application. The transport property of the device, made with CN-Cu₂O system, was followed by the Poole-Frenkel (PF) emission for the OFF-state and ohmic conduction mechanism for the ON-state. The device exhibited excellent endurance stability with ON to OFF ratio 4 × 10² for 2 × 10³ cycles. The device also demonstrated the nonvolatile memory behavior, where the power drops have no impact on either ON-state or OFF-state for the period of 2 × 10³ s.

Original language	English
Article number	137650
Journal	Chemical Physics Letters
Volume	754
DOIs	https://doi.org/10.1016/j.cplett.2020.137650
Publication status	Published - Sept 2020

Keywords

Bipolar resistive switching
Carbon nitride
Copper oxide nanoparticles
Non-volatile memory

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/j.cplett.2020.137650

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title = "Bipolar resistive switching behavior of carbon nitride supported copper oxide nanoparticles",

abstract = "In this article, a new in-situ protocol has been reported for the synthesis of carbon nitride supported copper oxide nanoparticles (CN-Cu2O), where the oxide nanoparticles are highly dispersed on the support matrix. The composite system was studied for the electronic memory application. The transport property of the device, made with CN-Cu2O system, was followed by the Poole-Frenkel (PF) emission for the OFF-state and ohmic conduction mechanism for the ON-state. The device exhibited excellent endurance stability with ON to OFF ratio 4 × 102 for 2 × 103 cycles. The device also demonstrated the nonvolatile memory behavior, where the power drops have no impact on either ON-state or OFF-state for the period of 2 × 103 s.",

keywords = "Bipolar resistive switching, Carbon nitride, Copper oxide nanoparticles, Non-volatile memory",

author = "Perla, {Venkata K.} and Ghosh, {Sarit K.} and Kaushik Mallick",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

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doi = "10.1016/j.cplett.2020.137650",

language = "English",

volume = "754",

journal = "Chemical Physics Letters",

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T1 - Bipolar resistive switching behavior of carbon nitride supported copper oxide nanoparticles

AU - Perla, Venkata K.

AU - Ghosh, Sarit K.

AU - Mallick, Kaushik

PY - 2020/9

Y1 - 2020/9

N2 - In this article, a new in-situ protocol has been reported for the synthesis of carbon nitride supported copper oxide nanoparticles (CN-Cu2O), where the oxide nanoparticles are highly dispersed on the support matrix. The composite system was studied for the electronic memory application. The transport property of the device, made with CN-Cu2O system, was followed by the Poole-Frenkel (PF) emission for the OFF-state and ohmic conduction mechanism for the ON-state. The device exhibited excellent endurance stability with ON to OFF ratio 4 × 102 for 2 × 103 cycles. The device also demonstrated the nonvolatile memory behavior, where the power drops have no impact on either ON-state or OFF-state for the period of 2 × 103 s.

AB - In this article, a new in-situ protocol has been reported for the synthesis of carbon nitride supported copper oxide nanoparticles (CN-Cu2O), where the oxide nanoparticles are highly dispersed on the support matrix. The composite system was studied for the electronic memory application. The transport property of the device, made with CN-Cu2O system, was followed by the Poole-Frenkel (PF) emission for the OFF-state and ohmic conduction mechanism for the ON-state. The device exhibited excellent endurance stability with ON to OFF ratio 4 × 102 for 2 × 103 cycles. The device also demonstrated the nonvolatile memory behavior, where the power drops have no impact on either ON-state or OFF-state for the period of 2 × 103 s.

KW - Bipolar resistive switching

KW - Carbon nitride

KW - Copper oxide nanoparticles

KW - Non-volatile memory

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DO - 10.1016/j.cplett.2020.137650

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SN - 0009-2614

VL - 754

JO - Chemical Physics Letters

JF - Chemical Physics Letters

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ER -

Bipolar resistive switching behavior of carbon nitride supported copper oxide nanoparticles

Abstract

Keywords

ASJC Scopus subject areas

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