TY - JOUR
T1 - B‐doping mediated formation of oxygen vacancies in Bi2Sn2O7 quantum dots with a unique electronic structure for efficient and stable photoelectrocatalytic sulfamethazine degradation
AU - Wu, Huizhong
AU - Hu, Zhongzheng
AU - Liang, Ruiheng
AU - Zhang, Xuyang
AU - Zhou, Minghua
AU - Arotiba, Omotayo A.
N1 - Publisher Copyright:
© 2023 Elsevier B.V.
PY - 2023/8/15
Y1 - 2023/8/15
N2 - This study devised a straightforward one-step approach that enabled simultaneous boron (B) doping and oxygen vacancies (OVs) production on Bi2Sn2O7 (BSO) (B-BSO-OV) quantum dots (QDs), optimizing the electrical structure of the photoelectrodes. Under light-emitting diode (LED) illumination and a low potential of 1.15 V, B-BSO-OV demonstrated effective and stable photoelectrocatalytic (PEC) degradation of sulfamethazine (SMT), achieving the first-order kinetic rate constant of 0.158 min−1. The surface electronic structure, the different factors influencing the PEC degradation of SMT, and the degradation mechanism were studied. Experimental studies have shown that B-BSO-OV exhibits strong visible light trapping ability, high electron transport ability, and superior PEC performance. DFT calculations show that the presence of OVs on BSO successfully reduces the band gap, controls the electrical structure, and accelerates charge transfer. This work sheds light on the synergistic effects of the electronic structure of B-doping and OVs in heterobimetallic oxide BSO under the PEC process and offers a promising approach for the design of photoelectrodes.
AB - This study devised a straightforward one-step approach that enabled simultaneous boron (B) doping and oxygen vacancies (OVs) production on Bi2Sn2O7 (BSO) (B-BSO-OV) quantum dots (QDs), optimizing the electrical structure of the photoelectrodes. Under light-emitting diode (LED) illumination and a low potential of 1.15 V, B-BSO-OV demonstrated effective and stable photoelectrocatalytic (PEC) degradation of sulfamethazine (SMT), achieving the first-order kinetic rate constant of 0.158 min−1. The surface electronic structure, the different factors influencing the PEC degradation of SMT, and the degradation mechanism were studied. Experimental studies have shown that B-BSO-OV exhibits strong visible light trapping ability, high electron transport ability, and superior PEC performance. DFT calculations show that the presence of OVs on BSO successfully reduces the band gap, controls the electrical structure, and accelerates charge transfer. This work sheds light on the synergistic effects of the electronic structure of B-doping and OVs in heterobimetallic oxide BSO under the PEC process and offers a promising approach for the design of photoelectrodes.
KW - B-doping
KW - DFT
KW - Electronic structure
KW - Oxygen vacancies
KW - Photoelectrocatalysis
KW - Quantum dots
UR - http://www.scopus.com/inward/record.url?scp=85160439953&partnerID=8YFLogxK
U2 - 10.1016/j.jhazmat.2023.131696
DO - 10.1016/j.jhazmat.2023.131696
M3 - Article
C2 - 37245365
AN - SCOPUS:85160439953
SN - 0304-3894
VL - 456
JO - Journal of Hazardous Materials
JF - Journal of Hazardous Materials
M1 - 131696
ER -