@inproceedings{1f0ba3caa0cb4880a39ff20bd5504d24,
title = "Application of Si LED's (450nm-750nm) in CMOS integrated circuitry based moems - Simulation and analysis",
abstract = "This paper discusses the simulation, development and potential application of Si LEDs in pre-specified complementary metal oxide semiconductors (CMOS) integrated circuit structures in the wavelength range of 450nm -750nm. A MONTE CARLO simulation technique was developed in which the optical wave propagation phenomena as relevant in CMOS structures were continuously updated as the optical ray progresses through the structure. Refractive index of the material, layers thickness and structure curvatures were all incorporated as ray propagation parameters. By using a multi-ray simulation approach, the overall propagation phenomena wrt refraction, reflection, scattering, and intensities could be evaluated in globular context in any complex CMOS integrated circuit structure in a progressive way. MATLAB software was used as a mathematical capable and programmable language to develop the dedicated software evaluation tool. Subsequently, some first iteration, conceptual, applications of MOEMS structures are demonstrated as implemented in Si CMOS integrated circuitry, utilizing Si InAva LEDs and silicon detectors.",
keywords = "CMOS technology, Light emitting device, Monte Carlo, Objects based modeling, Optical simulation, Opto-electronic integrated circuits, Si CMOS structure, Silicon",
author = "Snyman, {Lukas W.} and Ogudo, {Kingsley A.} and Plessis, {Monuko Du} and Gustave Udahemuka",
year = "2009",
doi = "10.1117/12.808551",
language = "English",
isbn = "9780819474544",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "MOEMS and Miniaturized Systems VIII",
note = "MOEMS and Miniaturized Systems VIII ; Conference date: 27-01-2009 Through 28-01-2009",
}