Application of Si LED's (450nm-750nm) in CMOS integrated circuitry based moems - Simulation and analysis

Lukas W. Snyman, Kingsley A. Ogudo, Monuko Du Plessis, Gustave Udahemuka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Citations (Scopus)


This paper discusses the simulation, development and potential application of Si LEDs in pre-specified complementary metal oxide semiconductors (CMOS) integrated circuit structures in the wavelength range of 450nm -750nm. A MONTE CARLO simulation technique was developed in which the optical wave propagation phenomena as relevant in CMOS structures were continuously updated as the optical ray progresses through the structure. Refractive index of the material, layers thickness and structure curvatures were all incorporated as ray propagation parameters. By using a multi-ray simulation approach, the overall propagation phenomena wrt refraction, reflection, scattering, and intensities could be evaluated in globular context in any complex CMOS integrated circuit structure in a progressive way. MATLAB software was used as a mathematical capable and programmable language to develop the dedicated software evaluation tool. Subsequently, some first iteration, conceptual, applications of MOEMS structures are demonstrated as implemented in Si CMOS integrated circuitry, utilizing Si InAva LEDs and silicon detectors.

Original languageEnglish
Title of host publicationMOEMS and Miniaturized Systems VIII
Publication statusPublished - 2009
Externally publishedYes
EventMOEMS and Miniaturized Systems VIII - San Jose, CA, United States
Duration: 27 Jan 200928 Jan 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceMOEMS and Miniaturized Systems VIII
Country/TerritoryUnited States
CitySan Jose, CA


  • CMOS technology
  • Light emitting device
  • Monte Carlo
  • Objects based modeling
  • Optical simulation
  • Opto-electronic integrated circuits
  • Si CMOS structure
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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