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Application of quantum dots in organic memory devices: A brief overview
Kaushik Mallick
, Michael J. Witcomb
MINTEK
University of the Witwatersrand
Research output
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Chapter in Book/Report/Conference proceeding
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Chapter
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peer-review
Overview
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Engineering
Quantum Dot
100%
Conductive
63%
Potential Application
18%
Bias Voltage
18%
Activation Voltage
18%
Energy State
18%
Flash Memory
18%
Reverse Bias
9%
Fast Response
9%
Bistables
9%
Quantum Confinement
9%
Single Electron
9%
Response Time
9%
Room Temperature
9%
Memory Effect
9%
Retention Time
9%
Cadmium Selenide
9%
Random Access Memory
9%
Mechanical Phenomenon
9%
Keyphrases
Organic Memory Devices
100%
High Conductive
27%
Activation Voltage
18%
High-density Memory
9%
Electrical Bistability
9%
Read Only Memory
9%
Charge Confinement
9%
Low Activation
9%
Number of Atoms
9%
Cadmium Selenide Telluride
9%
Electrical Bias
9%
Room Temperature Operation
9%
Data Memory
9%
Bistable Materials
9%
Bulk System
9%
Nonvolatile Flash Memory
9%
Short Response Time
9%
Metal-embedded
9%
Flash Memory Device
9%
Mechanical Phenomena
9%
Material Science
Quantum Dot
100%
Physical Property
9%
Density
9%
Polymer
9%
Optical Property
9%
Cadmium
9%
Magnetic Property
9%
Memory Effect
9%
Mechanical Phenomenon
9%
Cadmium Selenide
9%
Chemical Engineering
Cadmium Telluride
100%