An experimental study of switching GaN FETs in a coaxial transmission line

A. J.L. Joannou, D. C. Pentz, J. D. Van Wyk, A. S. De Beer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Citations (Scopus)

Abstract

The switching characteristics of GaN FETs have not yet been measured accurately because of their small electromagnetic size in relation to the circuit and the electromagnetic environment the measurements are exposed to. Switching GaN FETs in a transmission line will allow for measurements to be taken in an electromagnetically defined environment. The transmission line is adapted to take optimum measurements. This is proven by the waveforms presented.

Original languageEnglish
Title of host publication2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479930159
DOIs
Publication statusPublished - 25 Sept 2014
Event2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014 - Lappeenranta, Finland
Duration: 26 Aug 201428 Aug 2014

Publication series

Name2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014

Conference

Conference2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014
Country/TerritoryFinland
CityLappeenranta
Period26/08/1428/08/14

Keywords

  • Component for Measurements
  • Device application
  • Device Characterization
  • Emerging Technology
  • Gallium Nitride(GaN)
  • Measurement
  • Power semiconductor device

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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