Abstract
A single pot synthesis method of aminobenzene stabilized bismuth iodide particles (ABBI) is reported for the nonvolatile random access memory application. The microscopic and surface property of the as-synthesized organic-inorganic hybrid system has been characterized using different techniques. The current-voltage characteristic of the device, made with ABBI, exhibited O-shaped hysteresis behaviour. For the random access memory application, the device was demonstrated the steady endurance and retention for 103 times and 2×103 sec, respectively. The charge transport property of the device was followed by space charge limited current and trapped assisted tunneling mechanism.
Original language | English |
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Pages (from-to) | 22652-22661 |
Number of pages | 10 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 31 |
Issue number | 24 |
DOIs | |
Publication status | Published - Dec 2020 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering