Advancing Frontiers: A High-Impact Study on the Synthesis, Characterization, and Superior Device Performance of AlCr₂O₄/MXene Nanocomposites

Here we present the fabrication of a multilayer resistive memory device (ReRAM) utilizing AlCr₂O₄/MXene nanocomposite. Comprehensive investigations into the structural and morphological properties of the nanostructures were conducted using various characterization techniques. The fabricated device was tested by measuring I-V characteristics at different current applications which encompasses all previous results. The band gap value for the nanocomposite was reduced to 2.42 eV while that for AlCr₂O₄ was measured at 3.25 eV via photoluminescence spectrum. Average particle size of the AlCr₂O₄/MXene nanocomposite was determined to be 25 nm through powder X-ray diffraction analysis. Crystallographic analysis revealed that all crystal peaks conform to the R-3c (167) space group, indicative of a standard hexagonal crystal structure. Energy-dispersive X-ray readings provided further confirmation that all required elements are present in the sample, affirming successful synthesis of the nanocomposite. Notably, the nanocomposite demonstrated exceptional performance as an electrode material in ReRAM, as evidenced by its current-voltage characteristics, making the AlCr₂O₄/MXene nanocomposite suitable for a wide range of next-generation device applications.