A low noise and power consumption, high-gain LNA in 130 nm SiGe BiCMOS using transmission lines

M. Fanoro, S. S. Olokede, S. Sinha

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

A two-stage low-noise amplifier (LNA), designed using GlobalFoundries' 130 nm SiGe BiCMOS process technology for 56-64 GHz applications is presented in this paper. The LNA consists of two cascode stages, with inductive degeneration using short stub transmission lines with a quarter wavelength. The input matching and output matching adopt T-section matching to ensure optimal noise and input matching, while realizing high gain over the desired frequency using the interstage and output matching. The designed LNA uses 7.6 mW of dc power from a 1.5 V supply, while achieving 22.99 dB gain and a noise figure of 4.43 dB at 60 GHz. It is unconditionally stable and has a 3 dB bandwidth of 3.9 dB across the V-band.

Original languageEnglish
Title of host publication2017 32nd General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9789082598704
DOIs
Publication statusPublished - 10 Nov 2017
Event32nd General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2017 - Montreal, Canada
Duration: 19 Aug 201726 Aug 2017

Publication series

Name2017 32nd General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2017
Volume2017-January

Conference

Conference32nd General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2017
Country/TerritoryCanada
CityMontreal
Period19/08/1726/08/17

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Instrumentation
  • Radiation

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