A 50 GHz SiGe BiCMOS active bandpass filter

Saurabh Chaturvedi; Mladen Bozanic; Saurabh Sinha

doi:10.1109/DDECS.2017.7934566

A 50 GHz SiGe BiCMOS active bandpass filter

Saurabh Chaturvedi, Mladen Bozanic, Saurabh Sinha

Faculty of Engineering and the Built Environment

University of Johannesburg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Citations (Scopus)

Abstract

This paper presents a second-order active bandpass filter (BPF) at millimeter-wave frequency band using 0.13 μm SiGe BiCMOS technology. A complementary cross-coupled pair based negative resistance technique is applied to compensate for the resistive losses of microstrip line resonators. The proposed active BPF is simulated using the Keysight Technologies (formerly Agilent's Electronic Measurement Group) Advanced Design System 2016.01. The center frequency (f_c), 3-dB bandwidth, and fractional bandwidth of the simulated BPF are 53.85 GHz, 14.18 GHz, and 26.33%, respectively. The BPF shows an insertion loss (IL) of 0.33 dB and a return loss (RL) of 18.03 dB at f_c. The minimum IL of 0.10 dB and best RL of 26.03 dB are observed in the passband. The noise figure and input 1-dB compression point (P_1dB) at f_c are 7.93 dB and -3.67 dBm, respectively. The power dissipation is 2.62 mW at 1.6 V supply voltage. For the input power level of -10 dBm, the power level of the second harmonic is -46.02 dBc.

Original language	English
Title of host publication	Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017
Editors	Manfred Dietrich, Ondrej Novak
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2-5
Number of pages	4
ISBN (Electronic)	9781538604717
DOIs	https://doi.org/10.1109/DDECS.2017.7934566
Publication status	Published - 26 May 2017
Event	20th IEEE International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017 - Dresden, Germany Duration: 19 Apr 2017 → 21 Apr 2017

Publication series

Name	Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017

Conference

Conference	20th IEEE International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017
Country/Territory	Germany
City	Dresden
Period	19/04/17 → 21/04/17

Keywords

Bandpass filter (BPF)
SiGe BiCMOS
loss compensation
negative resistance
process design kit (PDK)
resonator

ASJC Scopus subject areas

Safety, Risk, Reliability and Quality
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/DDECS.2017.7934566

Cite this

Chaturvedi, S., Bozanic, M., & Sinha, S. (2017). A 50 GHz SiGe BiCMOS active bandpass filter. In M. Dietrich, & O. Novak (Eds.), Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017 (pp. 2-5). Article 7934566 (Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DDECS.2017.7934566

Chaturvedi, Saurabh ; Bozanic, Mladen ; Sinha, Saurabh. / A 50 GHz SiGe BiCMOS active bandpass filter. Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017. editor / Manfred Dietrich ; Ondrej Novak. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 2-5 (Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017).

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title = "A 50 GHz SiGe BiCMOS active bandpass filter",

abstract = "This paper presents a second-order active bandpass filter (BPF) at millimeter-wave frequency band using 0.13 μm SiGe BiCMOS technology. A complementary cross-coupled pair based negative resistance technique is applied to compensate for the resistive losses of microstrip line resonators. The proposed active BPF is simulated using the Keysight Technologies (formerly Agilent's Electronic Measurement Group) Advanced Design System 2016.01. The center frequency (fc), 3-dB bandwidth, and fractional bandwidth of the simulated BPF are 53.85 GHz, 14.18 GHz, and 26.33%, respectively. The BPF shows an insertion loss (IL) of 0.33 dB and a return loss (RL) of 18.03 dB at fc. The minimum IL of 0.10 dB and best RL of 26.03 dB are observed in the passband. The noise figure and input 1-dB compression point (P1dB) at fc are 7.93 dB and -3.67 dBm, respectively. The power dissipation is 2.62 mW at 1.6 V supply voltage. For the input power level of -10 dBm, the power level of the second harmonic is -46.02 dBc.",

keywords = "Bandpass filter (BPF), SiGe BiCMOS, loss compensation, negative resistance, process design kit (PDK), resonator",

author = "Saurabh Chaturvedi and Mladen Bozanic and Saurabh Sinha",

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Chaturvedi, S, Bozanic, M & Sinha, S 2017, A 50 GHz SiGe BiCMOS active bandpass filter. in M Dietrich & O Novak (eds), Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017., 7934566, Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017, Institute of Electrical and Electronics Engineers Inc., pp. 2-5, 20th IEEE International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017, Dresden, Germany, 19/04/17. https://doi.org/10.1109/DDECS.2017.7934566

A 50 GHz SiGe BiCMOS active bandpass filter. / Chaturvedi, Saurabh; Bozanic, Mladen; Sinha, Saurabh.
Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017. ed. / Manfred Dietrich; Ondrej Novak. Institute of Electrical and Electronics Engineers Inc., 2017. p. 2-5 7934566 (Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 50 GHz SiGe BiCMOS active bandpass filter

AU - Chaturvedi, Saurabh

AU - Bozanic, Mladen

AU - Sinha, Saurabh

PY - 2017/5/26

Y1 - 2017/5/26

N2 - This paper presents a second-order active bandpass filter (BPF) at millimeter-wave frequency band using 0.13 μm SiGe BiCMOS technology. A complementary cross-coupled pair based negative resistance technique is applied to compensate for the resistive losses of microstrip line resonators. The proposed active BPF is simulated using the Keysight Technologies (formerly Agilent's Electronic Measurement Group) Advanced Design System 2016.01. The center frequency (fc), 3-dB bandwidth, and fractional bandwidth of the simulated BPF are 53.85 GHz, 14.18 GHz, and 26.33%, respectively. The BPF shows an insertion loss (IL) of 0.33 dB and a return loss (RL) of 18.03 dB at fc. The minimum IL of 0.10 dB and best RL of 26.03 dB are observed in the passband. The noise figure and input 1-dB compression point (P1dB) at fc are 7.93 dB and -3.67 dBm, respectively. The power dissipation is 2.62 mW at 1.6 V supply voltage. For the input power level of -10 dBm, the power level of the second harmonic is -46.02 dBc.

AB - This paper presents a second-order active bandpass filter (BPF) at millimeter-wave frequency band using 0.13 μm SiGe BiCMOS technology. A complementary cross-coupled pair based negative resistance technique is applied to compensate for the resistive losses of microstrip line resonators. The proposed active BPF is simulated using the Keysight Technologies (formerly Agilent's Electronic Measurement Group) Advanced Design System 2016.01. The center frequency (fc), 3-dB bandwidth, and fractional bandwidth of the simulated BPF are 53.85 GHz, 14.18 GHz, and 26.33%, respectively. The BPF shows an insertion loss (IL) of 0.33 dB and a return loss (RL) of 18.03 dB at fc. The minimum IL of 0.10 dB and best RL of 26.03 dB are observed in the passband. The noise figure and input 1-dB compression point (P1dB) at fc are 7.93 dB and -3.67 dBm, respectively. The power dissipation is 2.62 mW at 1.6 V supply voltage. For the input power level of -10 dBm, the power level of the second harmonic is -46.02 dBc.

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KW - negative resistance

KW - process design kit (PDK)

KW - resonator

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T3 - Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017

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BT - Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017

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Chaturvedi S, Bozanic M, Sinha S. A 50 GHz SiGe BiCMOS active bandpass filter. In Dietrich M, Novak O, editors, Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 2-5. 7934566. (Proceedings - 2017 IEEE 20th International Symposium on Design and Diagnostics of Electronic Circuit and Systems, DDECS 2017). doi: 10.1109/DDECS.2017.7934566

A 50 GHz SiGe BiCMOS active bandpass filter

Abstract

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Keywords

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