@inproceedings{5ef2e0d6eb1b47488b6c5179ae926e42,
title = "A 2.5 GHz low phase noise silicon germanium heterojunction bipolar transistor ring oscillator",
abstract = "This paper presents the modelling of phase noise for a two-stage single-ended silicon germanium (SiGe) heterojunction bipolar transistor-based ring oscillator using the impulse sensitivity function. It is shown that the lower flicker noise characteristic of the SiGe technology at low frequencies translates into low-frequency phase noise improvements. The ring oscillator has a computed phase noise of-80 dBc/Hz at 1 MHz offset for a 2.5 GHz signal. The figure of merit obtained for this oscillator is-142 dBc/Hz.",
keywords = "SiGe heterojunction bipolar transistor, phase noise, ring oscillator, single-ended",
author = "{Lodiwikus Jean Van Niekerk}, {Sarel Johannes} and Saurabh Sinha",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 39th International Semiconductor Conference, CAS 2016 ; Conference date: 10-10-2016 Through 12-10-2016",
year = "2016",
month = dec,
day = "14",
doi = "10.1109/SMICND.2016.7783064",
language = "English",
series = "Proceedings of the International Semiconductor Conference, CAS",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "137--140",
booktitle = "2016 39th International Semiconductor Conference, CAS 2016 - Proceedings",
address = "United States",
}