287 trapping of implanted hydrogen in type Ia diamond

C. G. Smallman; S. H. Connell; C. C.P. Madiba; J. P.F. Sellschop

doi:10.1016/0168-583X(95)01115-3

287 trapping of implanted hydrogen in type Ia diamond

C. G. Smallman, S. H. Connell, C. C.P. Madiba, J. P.F. Sellschop

University of the Witwatersrand

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Recent developments in the doping of diamond and in the technology of diamond film synthesis have stimulated interest in its use as a substrate material for electronic devices, as well as in a range of other new applications. Hydrogen is one of the most common impurities in natural and synthetic diamond, and is known to affect its electrical properties. However, the incorporation of hydrogen in diamond is still not well understood. In this paper we report a study of the trapping of hydrogen introduced into a type Ia natural diamond by ion implantation. The hydrogen depth distribution was measured by means of nuclear resonant reaction analysis (NRRA) after each stage of an annealing program. Deep trapping of implanted hydrogen within its own range distribution was observed, in contrast to the case in silicon.

Original language	English
Pages (from-to)	688-692
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	118
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(95)01115-3
Publication status	Published - Sept 1996
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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abstract = "Recent developments in the doping of diamond and in the technology of diamond film synthesis have stimulated interest in its use as a substrate material for electronic devices, as well as in a range of other new applications. Hydrogen is one of the most common impurities in natural and synthetic diamond, and is known to affect its electrical properties. However, the incorporation of hydrogen in diamond is still not well understood. In this paper we report a study of the trapping of hydrogen introduced into a type Ia natural diamond by ion implantation. The hydrogen depth distribution was measured by means of nuclear resonant reaction analysis (NRRA) after each stage of an annealing program. Deep trapping of implanted hydrogen within its own range distribution was observed, in contrast to the case in silicon.",

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AU - Connell, S. H.

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AU - Sellschop, J. P.F.

PY - 1996/9

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AB - Recent developments in the doping of diamond and in the technology of diamond film synthesis have stimulated interest in its use as a substrate material for electronic devices, as well as in a range of other new applications. Hydrogen is one of the most common impurities in natural and synthetic diamond, and is known to affect its electrical properties. However, the incorporation of hydrogen in diamond is still not well understood. In this paper we report a study of the trapping of hydrogen introduced into a type Ia natural diamond by ion implantation. The hydrogen depth distribution was measured by means of nuclear resonant reaction analysis (NRRA) after each stage of an annealing program. Deep trapping of implanted hydrogen within its own range distribution was observed, in contrast to the case in silicon.

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287 trapping of implanted hydrogen in type Ia diamond

Abstract

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